CaR310 氮化鎵元件設計工程師/技術主管-【2024/11/28~2024/11/28 09:00~16:00 單一徵才-冠亞半導體-日夜班技術員/工程師】
(電子工程師)
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依學經歷、證照核薪(每月經常薪資達4萬元以上)
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3年以上工作經驗
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碩士
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求才人數：2人
This GaN (Gallium Nitride) Device Engineer is responsible for the design, development, testing, and optimizes GaN-based power devices for applications like electric vehicles and renewable energy. The engineer will work closely with cross-functional teams to ensure the successful implementation of GaN technology in different products.
**Key Responsibilities:**
- Design GaN power devices including HEMTs (High Electron Mobility Transistors), diodes, and integrated circuits.
- Utilize simulation tools (e.g., TCAD, SPICE) to predict device performance and optimize designs.
- Perform electrical characterization of GaN power devices to evaluate performance metrics such as breakdown voltage, on-resistance, and switching speed.
- Analyze test data to identify performance trends and failure mechanisms.
- Implement reliability testing protocols to ensure long-term stability of power devices under various operating conditions.
- Collaborate with manufacturing teams to transition processes from R&D to production.
- Document and present findings, progress, and challenges to stakeholders and management.